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INK0002AC1 MOSFET N-Channel 25V 90A TO-252/D-PAK marking K2 very low RDS/low gate chargehigh power/high current handling capability
| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 90A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0032Ω/Ohm 60A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2V |
| 耗散功率Pd Power Dissipation | 115W |
| Description & Applications | • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
| 描述与应用 | •非常适于高频DC / DC转换器 •符合到JEDEC1） 针对目标应用 •N沟道逻辑电平 •优秀的栅极电荷x R DS（ON） 产品（FOM） •卓越的热电阻 •175°C的工作温度 •无铅引脚电镀，符合RoHS |
