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SI3831DV Complex FET -7V -2.4A SOT-163/SOT23-6/TSOP-6 marking 31
| 最大源漏极电压Vds Drain-Source Voltage | -7V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -7V |
| 最大漏极电流Id Drain Current | -2.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 240mΩ@ VGS = -2.5V, ID = -2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | Bi-Directional P-Channel MOSFET/Battery Switch Feature Low rSS(on) Symmetrical P-Channel MOSFET Rated for 2.5- to 12-V Operation Symmetrical 12-V Blocking (off) Voltage Solution for High-Side Battery Disconnect Switching (BDS) Supports Multiple Battery Applications Low Profile, Small Footprint TSOP-6 Package |
| 描述与应用 | 双向P沟道MOSFET/电池开关 特点 低RSS（上）对称的P沟道MOSFET 额定为2.5-12-V操作？ 12-V对称封锁（关闭）电压 解决高侧电池断开开关（BDS） 支持多种电池应用 薄型，占地面积小TSOP-6封装 |
