MP6K61FU7 Complex FET 30V 5A MPT6 marking MP6K61 4V drive built-in protection diode|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MP6K61FU7 Complex FET 30V 5A MPT6 marking MP6K61 4V drive built-in protection diode

Model：MP6K61FU7
Mark / screen / code / typing：MP6K61
Manufacturer：
Date Code：09+NOPB 09+NOPB
Package：MPT6
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	5A
源漏极导通电阻Rds Drain-Source On-State Resistance	77mΩ@ VGS =4V, ID =5A
开启电压Vgs（th） Gate-Source Threshold Voltage	1~2.5V
耗散功率Pd Power Dissipation	2W
Description & Applications	4V Drive Nch+Nch MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching
描述与应用	4V驱动N沟道+ N沟道MOSFET 特点 1）低导通电阻。 2）内置G-S的保护二极管。应用交换

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