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MP6K61FU7 Complex FET 30V 5A MPT6 marking MP6K61 4V drive built-in protection diode
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 5A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 77mΩ@ VGS =4V, ID =5A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1~2.5V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | 4V Drive Nch+Nch MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching |
描述与应用 | 4V驱动N沟道+ N沟道MOSFET 特点 1)低导通电阻。 2)内置G-S的保护二极管。 应用 交换 |