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RN1911FE NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=120~700 R1=10KΩ 100mW/0.1W SOT-563/ES6 marking XM switching inverting interface driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~700 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2910FE to RN2911FE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管）•两个设备都纳入一个极端超迷你（6针）封装。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，使能制造的更加紧凑的设备，并降低装配成本。 •互补RN2910FE的到RN2911FE 应用 •开关，逆变电路，接口电路和驱动器电路应用 |
