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3SK241-Q MESFET-N channel 13V 8.5mA-35mA -3.5V SOT-143 marking DUQ RF application/low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
13V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-6V
漏极电流(Vgs=0V)IDSS
Drain Current
8.5mA-35mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-3.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsHigh Frequency FETs. GaAs N-Channel MES FET. For VHF-UHF amplification. Features: . Low noise-figure (NF) . Large power gain PG . Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
描述与应用高频场效应管. 砷化镓N沟道MES 场效应管. 用于甚高频-超高频放大 ,低噪声系数(NF), 大功率增益PG, 迷你型包装,通过带/盒包装允许缩减集的大小和自动插入.
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