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2SB1215S PNP transistors（BJT） -120V -3A 130MHz 140~280 -500mV/-0.5V TO-252/DPAK marking B1215 highspeed inverter/convertor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor High current switching applications Applications Relay drivers ,high speed inverters,converters,and other general high current switching applications Feature Low collector-to-emitter saturation voltage high fT Excellent linearity of hFE Fast switching time |
| 描述与应用 | PNP硅外延平面晶体管 高电流开关应用 应用 继电器驱动器，高速逆变器，转换器，及其他一般高电流开关应用 特点 低集电极 - 发射极饱和电压 高FT 出色的线性度HFE 快速开关时间 |
