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MMUN2233RLT1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 4.7k 47k gain80-200 SOT-23/SC-59 marking A8K ESD protection

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)80-200
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel.
描述与应用特性 •简化电路设计 •缩小板级空间和元件数量 •SOT-23封装,可以使用波或回流焊接。修改后的鸥翅引线在焊接热应力吸收消除模具损坏的可能性。 •可在8 mm压纹带和卷轴。使用的设备 号码编排7 inch/3000的单位卷轴。替换“T1” “T3”的设备号编排13 inch/10,000单位卷轴。
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