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CPH6615 Complex FET 30V/-30V 2.5A/-1.8A SOT-163/SOT23-6/CPH6 marking WB ultra high-speed switch 4V drive

Price (excluding freight):
Batches(PCS):
$0.216
≤99
$0.194
≤499
$0.162
≤999
$0.140
≤2999
$0.130
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V/-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
2.5A/-1.8A
源漏极导通电阻Rds
Drain-Source On-State Resistance
210mΩ@ VGS = 1V,ID =4A
开启电压Vgs(th)
Gate-Source Threshold Voltage
1.2~2.6V
耗散功率Pd
Power Dissipation
900mW/0.9W
Description & ApplicationsN-Channel and P-Channel Silicon MOSFETS General-Purpose Switching Device Applications Features • The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • Best suited for load switches. • 4V drive.
描述与应用N沟道和P沟道硅MOSFET 通用开关设备应用 特点 •CPH6614采用了N沟道MOSFET和一个P沟道MOSFET,具有低导通电阻, 超高速开关,从而实现高密度安装。 •优秀的导通电阻特性。 •最适合用于负载开关。 •4V驱动器。
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