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ECH8616 Complex FET 60V 3A ECH8 marking FJ ultra high-speed switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 133mΩ@ VGS = 4V, ID = 0.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2~2.6V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-Speed Switching Applications Features • Ultrahigh-speed switching. • 4V drive. • Composite type, facilitating high-density mounting |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 超高速开关应用 特点 •超高速开关。 •4V驱动器。 •复合型，促进高密度安装。 |
