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MT6L75CT NPN+NPN Complex Bipolar Transistor 10V/13V 25mA/80mA 70~140/110~160 CST3 marking 52 switch and digital circuit application
|
V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
10V/13V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 5V/6V |
| IC Collector Current(IC) Q1/Q2 | 25mA/80mA |
| DC Current Gain(hFE) Q1/Q2 | 70~140/110~160 |
|
Transtion Frequency(fT) Q1/Q2 |
12000MHz/8500MHz |
| Pc Power Dissipation | 0.1W |
| Description & Applications | Features • TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE • It exsels in the buffer and oscillation use. • Two devices are built in to the fine pich small mold package (6pins):fs6 • VHF~UHF Band Low-Noise Amplifier Applications |
