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BC856 PNP transistors(BJT) -80V -100mA/-0.1A 100MHz 125~475 -250mV/-0.25V SOT-23/SC-59 marking 3D switch/amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −65V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 125~475 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -250mV/-0.25V |
耗散功率Pc PoWer Dissipation | 250mW/0.25W |
Description & Applications | PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. |
描述与应用 | PNP通用晶体管 特点 •低电流(最大100 mA) •低电压(最大65 V)。 应用 •通用开关和放大。 |