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MMBT5088LT1G NPN Transistors(BJT) 35V 50mA 50Mhz 300~900 500mV/0.5V SOT-23/SC-59 marking 1Q
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 50Mhz |
直流电流增益hFE DC Current Gain(hFE) | 300~900 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 225mW/0.225W |
Description & Applications | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
描述与应用 | 这些设备是无铅,无卤/ BFR免费,并符合RoHS 符合 |