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UP0411300L Complex Bipolar Transistor -50V -100mA HEF=80 R1=R2=47KΩ SOT563 MARKING 6S
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA |
| Input Resistance(R1) | 47KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 80 |
| Transtion Frequency(fT) | 80MHZ |
| Power Dissipation （Pd） | 125MW |
| Description & Applications | For switching/digital circuits
Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
|
| Technical Documentation Download | Read Online |
