Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
KTC5084-O NPN Transistors(BJT) SOT-23/SC-59 marking MCO
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 80mA |
| 截止频率fT Transtion Frequency(fT) | 7GHZ |
| 直流电流增益hFE DC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type. * VHF~UHF Band Low Noise Amplifier Applications * Low noise figure, high gain. * NF = 1.1dB, |S21e|2= 11dB (f = 1 GHz) |
| 描述与应用 | 东芝晶体管NPN硅外延平面型。 * VHF〜UHF频段低噪声放大器的应用 *低噪声系数，高增益。 NF=1.1分贝，S21E|2=11分贝（F= 1千兆赫） |
