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BFQ17 NPN Transistors(BJT) 15V 150mA/0.15A 1.5GHz 80 SOT-89/SC-62/TO-243 marking FA
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 1.5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. |
| 描述与应用 | 1 GHz的宽带晶体管NPN 说明 为SOT89塑料外壳，用于在厚薄膜电路的NPN晶体管。该晶体管具有极其良好的互调性能和高功率增益。 |
