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MMBT5962 NPN Transistors(BJT) 45V 100mA/0.1A 450~1400 200mV/0.2V SOT-23/SC-59 marking 117 low noise，high gain ，general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 45V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 450~1400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率Pc Power Dissipation | 625mW/0.625W |
| Description & Applications | This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics |
| 描述与应用 | 这个装置是专为使用低噪声，高增益，一般 通用放大器要求集电极电流为50 mA。 |
