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MMBFJ211 JFET N-Channel 25v 7~20mA SOT-23 marking G2W RF amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 7~20ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -2.5~-4.5v |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. |
| 描述与应用 | N沟道射频放大器 该设备是专为HF/ VHF混频器/放大器和 应用程序的方法50是不足够的。足够 增益和低噪声敏感的接收器。 |
