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LMBT6517LT1G NPN Transistors(BJT) 350V 500mA/0.5A 40Mhz~200Mhz 15~200 100mV~500mV SOT-23/SC-59 marking 1Z
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 350V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 350V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 40Mhz~200Mhz |
| 直流电流增益hFE DC Current Gain(hFE) | 15~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV~500mV |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | 高电压晶体管NPN硅 产品符合RoHS要求的材料。 |
