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BCP56 NPN Transistors(BJT) 100V 1.2A 130MHz 40~250 500mV/0.5V SOT-223 marking
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 1.2A |
| 截止频率fT Transtion Frequency(fT) | 130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 40~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. |
| 描述与应用 | NPN通用放大器 这些设备是专为通用中功率放大器和开关要求集电极 电流可达1A。来源从工艺39。 |
