FSB649 NPN Transistors(BJT) 35V 3A 150MHz 100~300 600mV/0.6V SOT-23/SC-59 marking 649 lowsaturated |Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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FSB649 NPN Transistors(BJT) 35V 3A 150MHz 100~300 600mV/0.6V SOT-23/SC-59 marking 649 lowsaturated

Model：FSB649
Mark / screen / code / typing：649
Manufacturer：
Date Code：10NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	35V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	25V
集电极连续输出电流IC Collector Current(IC)	3A
截止频率fT Transtion Frequency(fT)	150MHz
直流电流增益hFE DC Current Gain(hFE)	100~300
管压降VCE（sat） Collector-Emitter Saturation Voltage	600mV/0.6V
耗散功率Pc Power Dissipation	500mW/0.5W
Description & Applications	NPN Low Saturation Transistor high current gain
描述与应用	NPN低饱和晶体管高电流增益

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