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BC848C NPN Transistors(BJT) 30V 100mA/0.1A 250MHz 420~800 200~600 mV SOT-23/SC-59 marking 1L
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 420~800 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP) |
| 描述与应用 | NPN硅晶体管自动对焦 AF输入级和驱动器应用 高电流增益 低集电极 - 发射极饱和电压，低管压降 低噪音30 Hz和15千赫之间 互补类型：BC856，BC857，BC858 BC859，BC860（PNP） |
