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mmbt3906 PNP transistors（BJT） -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2a
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | Plastic-Encapsulate Transistors FEATURES Complementary type MMBT3904 Epitaxial planar die construction |
| 描述与应用 | 塑料封装晶体管 特点 互补型MMBT3904 外延平面模建设 |
