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2SA1727-Q PNP transistors(BJT) -400V -500mA/-0.5A 12MHz 82~164 -1000mV/-1V TO-252/DPAK marking A1727 high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-400V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-400V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
12MHz
直流电流增益hFE
DC Current Gain(hFE)
82~164
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsHigh-voltage Switching Transistor Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area).
描述与应用高压开关晶体管 特点 1)高击穿电压BVCEO= 400V。 2)低饱和电压,通常VCE(sat)的IC / IB= 0.3V=100mA/10毫安的。 3)高开关速度,通常是TF:IC=100MA1秒。 4)宽安全工作区(SOA)
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