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ECH8649-S-TL-H Complex FET 20V 7.5A ech8 marking WT general switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 7.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 26mΩ@ VGS = 2.5V, ID = 2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.3V |
| 耗散功率Pd Power Dissipation | 1.4W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type. • Halogen free |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •2.5V驱动。 •最适合LIB充电和放电开关。 •共漏型。 •无卤 |
