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PMBTA44 NPN Transistors(BJT) 500V 300mA/0.3A 20MHz 200 400mV~750mV SOT-23/SC-59 marking W3W

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
500V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
400V
集电极连续输出电流IC
Collector Current(IC)
300mA/0.3A
截止频率fT
Transtion Frequency(fT)
20MHz
直流电流增益hFE
DC Current Gain(hFE)
200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV~750mV
耗散功率Pc
Power Dissipation
250mW/0.25W
Description & Applications400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qualified Applications LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply
描述与应用400 V,0.3 A NPN高电压低VCEsat(BISS)晶体管 一般说明 NPN高电压低VCEsat  在小信号(BISS)晶体管的突破 SOT23(TO-236AB)小型表面贴装器件(SMD)塑料包装。 特点  低电流(最大300毫安)  高电压(最大400 V)  AEC-Q101资格 应用  LED链模块的LED驱动器  LCD背光  高强度气体放电灯(HID)前灯  汽车电机管理 挂钩开关的有线电信  开关模式电源
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