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NSBC123JPDXV6T1G NPN+PNP Complex Bipolar Digital Transistor -50V/50V -100mA/100mA HEF=80~140 R1=2.2KΩ R2=47KΩ 500mW/0.5W SOT-563 marking 3S6 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -50V/50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -50V/50V
集电极连续输出电流IC Collector Current(IC) -100mA/100mA
Q1基极输入电阻R1 Input Resistance(R1) 2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 0.047
Q2基极输入电阻R1 Input Resistance(R1) 2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 0.047
直流电流增益hFE DC Current Gain(hFE) 80~140
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 500mW/0.5W
Description & Applications Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch Tape and Reel •AEC−Q101 Qualified and PPAP Capable •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements •These are Pb−Free Devices
描述与应用 特点 •双偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米,7英寸磁带和卷轴 •通过AEC-Q101认证和PPAP能力 •的NSV前缀为汽车和其他应用程序需要独特的网站和控制变更要求 •这些都是Pb-Free设备
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