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SSM6P41FE Complex FET -20V -720mA/-0.72A SOT-563/ES6 marking PP3 power managementswitch
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -720mA/-0.72A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 300mΩ@ VGS = -4.5V, ID = -400mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.3~-1.0V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ Power Management Switches • 1.5-V drive • Low ON-resistance : Ron = 1.04 Ω (max) (@VGS = -1.5 V) : Ron = 0.67 Ω (max) (@VGS = -1.8 V) : Ron = 0.44 Ω (max) (@VGS = -2.5 V) : Ron = 0.30 Ω (max) (@VGS = -4.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 ○电源管理开关 •1.5-V驱动器 •低导通电阻：RON= 1.04Ω（最大值）（@ VGS=-1.5 V） ：RON =0.67Ω（最大）（@ VGS=-1.8 V） ：RON =0.44Ω（最大）（@ VGS=-2.5 V） ：RON =0.30Ω（最大）（@ VGS=-4.5 V） |
