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FMMT5551TA NPN Transistors(BJT) 180V 600mA/0.6a 100~300MHz 80~250 200mV/0.2V SOT-23/SC-59 marking ZG
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 100~300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS COMPLEMENTARY TYPES FMMT5401 |
| 描述与应用 | SOT23 NPN硅平面高压晶体管 互补类型FMMT5401 |
