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MGF4714CP MESFET-N channel -3V 15mA-60mA -0.1V -- -1.5V GD-22 marking C RF application/low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-3V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-4V
漏极电流(Vgs=0V)IDSS
Drain Current
15mA-60mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1V -- -1.5V
耗散功率Pd
Power Dissipation
50mW
Description & Applications Plastic mold package low noise GaAs HEMT L to Ku band low noise amplifiers Low noise figure High associated gain
描述与应用 塑料模具封装低噪音砷化镓 HEMT L到Ku波段低噪声放大器 低噪声系数 高相关增益
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