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MGF4714CP MESFET-N channel -3V 15mA-60mA -0.1V -- -1.5V GD-22 marking C RF application/low noise
| 最大源漏极电压Vds Drain-Source Voltage |
-3V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage |
-4V |
| 漏极电流(Vgs=0V)IDSS Drain Current |
15mA-60mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage |
-0.1V -- -1.5V |
| 耗散功率Pd Power Dissipation |
50mW |
| Description & Applications | Plastic mold package low noise GaAs HEMT L to Ku band low noise amplifiers Low noise figure High associated gain |
| 描述与应用 | 塑料模具封装低噪音砷化镓 HEMT L到Ku波段低噪声放大器 低噪声系数 高相关增益 |
