NTHD4P02FT1G complex FET MOSFET+schottky diode -20V -2.2A 2.2A 0.48V 1206-8/vs-8 marking C3E DC-DC converter|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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NTHD4P02FT1G complex FET MOSFET+schottky diode -20V -2.2A 2.2A 0.48V 1206-8/vs-8 marking C3E DC-DC converter

Model：NTHD4P02FT1G
Mark / screen / code / typing：C3E
Manufacturer：
Date Code：05NOPB 05+ROHS7K
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	P沟道 P-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	-20V
最大漏极电流Id Drain Current	-12V
源漏极导通电阻Rds Drain-Source On-State Resistance	-2.2A
开启电压Vgs（th） Gate-Source Threshold Voltage	155mΩ@ VGS =-4.5V, ID =-2.2A
耗散功率Pd Power Dissipation	-0.6~-1.2V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	20V

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