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RTQ025P02 MOSFET P-Channel -20V 2.5A 0.072ohm SOT-163 marking TQ low on-resistance high-speed switch low voltage drive
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | -2.5A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.072Ω @-2.5A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.7--2.0V |
耗散功率Pd Power Dissipation | 1.25W |
Description & Applications | Features Low on-resistance. (570mΩ at 2.5V) High power package. High speed switching. Low voltage drive. (2.5V) |
描述与应用 | 低导通电阻。 (570mΩ在2.5V) 高功率封装。 高速开关。 低电压驱动 |