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CXT5401 PNP transistors（BJT） -160V -500mA/-0.5A 100~300MHz 60~240 -500mV/-0.5V SOT-89/SC-62 marking CXT5401 high voltageamplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 100~300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 1.2W |
| Description & Applications | SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. |
| 描述与应用 | 表面贴装PNP硅晶体管 产品描述： 中央半导体CXT5401型的PNP硅晶体管所生产外延平面工艺，在一个表面贴装封装，高电压放大器应用设计的环氧模。 |
