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PMN38EN MOSFET N-Channel 30V 5.4A SOT-163/TSOP-6/SC-74 marking 38 fast switch/low power dissipation/very low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 1.75W |
| Description & Applications | N-channel TrenchMOS logic level FET General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Logic level threshold Very fast switching Low threshold voltage Surface-mounted package |
| 描述与应用 | TrenchMOS逻辑电平N沟道FET 一般说明 逻辑电平N沟道增强型场效应晶体管（FET）在一个塑料 包装使用TrenchMOS技术 逻辑电平阈值 开关速度非常快 低阈值电压 表面贴装封装 |
