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2SC4627GDL NPN Transistors(BJT) 30V 15mA 650MHz 100~260 SOT-523/SC-75 marking UD high-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC Collector Current(IC) |
15mA |
| 截止频率fT Transtion Frequency(fT) |
650MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
100~260 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc Power Dissipation |
125mW/0.125W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •For high-frequency amplification •Optimum for RF amplification of FM/AM radios •High transition frequency fT •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 特点 •NPN硅外延平面型 •对于高频放大 •FM/ AM收音机，最适用于射频放大 •高转换频率fT •SS-迷你型包装，使瘦身的设备和通过自动插入磁带包装 |
