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DRC5123J0L NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 47k gain80 SOT-323/SC-70 marking N4

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Low collector-emitter saturation voltage Vce(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
描述与应用特性 低集电极 - 发射极饱和电压Vce(sat) 有助于集小型化,减少元件数量。 环保型无卤素封装
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