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DRC5123J0L NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 47k gain80 SOT-323/SC-70 marking N4
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.047 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features Low collector-emitter saturation voltage Vce(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
| 描述与应用 | 特性 低集电极 - 发射极饱和电压Vce（sat） 有助于集小型化，减少元件数量。 环保型无卤素封装 |
