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2SB1463GRL PNP transistors（BJT） -150V -100mA/-0.1A 200MHz 130~220 -1000mV/-1V SOT-523 marking IR high breakdown voltage/low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 130~220 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 125mW/0.125W |
| Description & Applications | PNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD2240 Features High collector to emitter voltage VCEO. Low noise voltage NV SS-Mini type package |
| 描述与应用 | PNP硅外延平面晶体管 对于高击穿电压低噪声放大 补充型2SD2240 特点 高集电极发射极电压VCEO。 低噪声电压NV SS-迷你型封装 |
