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SI3445DV MOSFET P-Channel -8V 5.6A 0.034ohm SOT-163 marking 45

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-5.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.034Ω @-5.6A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.45V-1.0V
耗散功率Pd
Power Dissipation		2W
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET
描述与应用P沟道1.8-V（G-S）的MOSFET
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