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RTAN140M NPN Bipolar Digital Transistor (BRT) 40V 400mA/0.4A 10k SOT-323/SC-70 marking QB

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)40v
集电极连续输出电流IC Collector Current(IC)400mA/0.4A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)820
截止频率fT Transtion Frequency(fT)36MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & Applications・Built-in bias resistor (R1=10kΩ) ・Small package for easy mounting. ・High reverse hFE ・Small collector to emitter saturatin voltage. VCE(sat)=10mV(TYP)(@IC=10mA/IB=0.5mA) Low on Resistane Ron=0.94Ω(TYP.)(@VI=7V)
描述与应用内置偏置电(R1=10KΩ) ·易于安装的小型装 ·高反向HFE ·小集电极到发射极饱和电压。 VCE(星期六)=10mV的(典型值)(@ IC=10mA/IB=0.5毫安) 低导通电阻 罗恩=0.94Ω(典型值)(@ VI= 7V)
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