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2SA1418S-TD PNP transistors（BJT） -180V -700mA/-0.7A 120MHz 140~280 -120mV/-0.12V SOT-89/PCP marking AD high breakdown voltage/highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -160V |
| 集电极连续输出电流IC Collector Current(IC) | -700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -120mV/-0.12V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN Epitaxial planar silicon transistors High-voltage switching Predriver applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Very small size making it easy to provide highdensity, small-sized hybrid ICs. |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 特点 ·采用FBET，MBIT过程。 ·高击穿电压和大电流的能力。 ·快速开关时间。 ·体积非常小，因此很容易提供高密度，小尺寸的混合集成电路。 |
