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2SB1120E PNP transistors（BJT） -20V -2.5A 250MHz 100~200 -450mV/-0.45V SOT-89/PCP marking BCE voltage regulator
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -10V |
| 集电极连续输出电流IC Collector Current(IC) | -2.5A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −450mV/-0.45V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor High current driver applications Applications Strobes,voltage regulators,relay drivers,lamp drivers. Features Low collector-to-emitter saturation voltage Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid IC’s |
| 描述与应用 | PNP硅外延平面晶体管 高电流驱动应用 应用 选通脉冲，电压调节器，继电器驱动器，灯驱动器。 特点 低集电极 - 发射极饱和电压 大电流容量 规模非常小，因此很容易提供高密度，小型混合IC |
