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BCW68G PNP transistors（BJT） -60V -800mA/-0.8A 200MHz 160~400 -700mV/-0.7V SOT-23/SC-59 marking DG high current gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流IC Collector Current(IC) | -800mA/-0.8A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.5V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. |
| 描述与应用 | PNP通用放大器 这个装置是专为通用放大器和开关应用电流为500 mA。来源于工艺63 |
