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2SJ646 MOSFET P-Channel -30V -8A 0.58ohm SOT-252 marking J646

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.58Ω @-10A,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.2--2.6V
耗散功率Pd
Power Dissipation
1W
Description & Applications
描述与应用
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