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BCW32LT1 NPN Transistors(BJT) 32V 100mA/0.1A 100MHz 200~450 250mV/0.25V SOT-23/SC-59 marking D2
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 32V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | General Purpose Transistors NPN Silicon Features • Pb−Free Package is Available |
| 描述与应用 | 通用晶体管NPN硅 |
