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BCW66G NPN Transistors(BJT) 75V 1A 100MHz 160~400 700mV/0.7V SOT-23/SC-59 marking EG general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
75V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
800mA/0.8A
截止频率fT
Transtion Frequency(fT)
170MHz
直流电流增益hFE
DC Current Gain(hFE)
160~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
700mV/0.7V
耗散功率Pc
Power Dissipation
330mW/0.33W
Description & ApplicationsNPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP)
描述与应用NPN硅AF晶体管 高电流增益 低集电极 - 发射极饱和电压 互补类型:BCW67,BCW68(PNP)
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