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BCW66G NPN Transistors(BJT) 75V 1A 100MHz 160~400 700mV/0.7V SOT-23/SC-59 marking EG general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
| 截止频率fT Transtion Frequency(fT) | 170MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) |
| 描述与应用 | NPN硅AF晶体管 高电流增益 低集电极 - 发射极饱和电压 互补类型：BCW67，BCW68（PNP） |
