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HMBT4401XLT1G NPN Transistors(BJT) 60V 600mA/0.6a 250MHz 100~300 750mV/0.75V SOT-23/SC-59 marking 2X generalswitch and amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
截止频率fT Transtion Frequency(fT) | 250MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 750mV/0.75V |
耗散功率Pc Power Dissipation | 225mW/0.225W |
Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HMBT4401 is designed for general purpose switching and amplifier applications. |
描述与应用 | NPN外延平面晶体管 专为通用开关和放大器应用。 |