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BFP405F NPN Transistors(BJT) 10V 12mA 25GHz 50~150 SOT-543/TSFP-4 marking AL
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流IC Collector Current(IC) | 12mA |
| 截止频率fT Transtion Frequency(fT) | 25GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 55mW |
| Description & Applications | NPN Silicon RF Transistor For low current applications Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line |
| 描述与应用 | NPN硅RF晶体管 对于低电流应用 最小封装为1.4×0.8×0.59毫米 噪声系数F =1.25 dB，*（在1.8 GHz时） 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路 |
