Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK0663GRL N-Channel Junction FET 55V 30MA SOT323 MARKING ZBR Low noise-figure High gate to drain voltage
| 最大源漏极电压Vds Drain-Source Voltage |
55v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage |
-55v |
| 漏极电流(Vgs=0V)IDSS Drain Current |
1~12ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage |
-5v |
| 耗散功率Pd Power Dissipation |
150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure (NF) •High gate to drain voltage VGDO •Low noise-figure (NF) •High gate to drain voltage VGDO |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数（NF） •高栅漏电压VGDO •低噪声系数（NF） •高栅漏电压VGDO |
