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2N7002K-7 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking K7K transistor/low on-resistanceRDS/Low Gate Threshold Voltage/high impedance/fast switch/设计/ESD protection
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant ESD Protected Up To 2kV "Green" Device Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | N沟道增强型场效应晶体管 特性 N沟道增强型场效应 晶体管 低导通电阻RDS（ON 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 无铅设计/符合限制有害物质指令（RoHS）规范要求 ESD保护高达2kV “绿色”设备 符合AEC-Q101高可靠性标准 |
