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SSM3J110TU MOSFET P-Channel -12V -2.3A 0.072ohm SOT-323 marking JJ3 high-speed switch 1.8V drive low on-resistance
最大源漏极电压Vds Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | -2.3A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.072Ω @-1A,-4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.3V-1.0V |
耗散功率Pd Power Dissipation | 800mW/0.8W |
Description & Applications | High Speed Switching Applications • 1.8V drive • Low on-resistance: Ron = 240mΩ (max)(@VGS = −1.8 V) Ron = 145mΩ (max) (@VGS = −2.5 V) Ron = 94mΩ (max) (@VGS = −4.0 V) |
描述与应用 | 高速开关应用 •1.8V驱动 •低导通电阻RON =240mΩ(最大)(@ VGS=-1.8 V) 罗恩=145mΩ(最大)(@ VGS= -2.5 V) RON =94mΩ(最大)(@ VGS=-4.0 V) |