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ME2306D-G MOSFET N-Channel 30V 3.16A SOT-23/SC-59 marking WF ultra low on-resistance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.16A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 37mΩ/Ohm @4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.0V |
| 耗散功率Pd Power Dissipation | 750mW/0.75W |
| Description & Applications | RDS(ON)≦85mΩ@VGS=4.5V RDS(ON)≦115mΩ@VGS=2.5V RDS(ON)≦135mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
| 描述与应用 | 超高密度电池设计极低的RD（ON） 卓越的导通电阻和最大DC电流能力 |
